Microsemi MSAFA1N100P3
MOSFET Device
| Part No. | MSAFA1N100P3 |
|---|---|
| Datasheet | MSAFA1N100P3 Download |
| Manufacturer |  Microsemi |
| Description | MOSFET Device |
| Buy | Stock & Price |
FEATURES
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● Low On-State resistance Avalanche and Surge Rated High Frequency Switching Ultra low Leakage Current UIS rated Available with Lot Acceptance Testing “L” Suffix Available with “J” leads 1 Amp 1000 V N-Channel enhancement mode high density
APPLICATIONS
Implantable Cardio Defibrillator Testing and Screening (per lot)● 100% Testing at 25C, DC parameters
● Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits)
MAXIMUM RATINGS
SYMBOL VDSS VGS ID1 ID2 IDM1 IAR EAR EAS TJ, TSTG PARAMETER Drain - Source Voltage Gate - Source Voltage Continuous Drain Current @ TC = 25 Continuous Drain Current @ TC = 100 Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Operating and Storage: Junction Temperature Range VALUE 1000 ±20 1 0.8 4 1 TBD TBD -55 to 150 UNIT Volts Volts Amps Amps Amps Amps mJ mJ C StaticELECTRICAL CHARACTERISTICS
SYMBOL BVDSS VGS(TH)2 VGS(TH)1 RDS(ON)1 RDS(ON)2 RDS(ON)3 RDS(ON)4 RDS(ON)5 IDSS1 IDSS2 IDSS3...