Microsemi MSAFX10N90A
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | MSAFX10N90A |
|---|---|
| Datasheet | MSAFX10N90A Download |
| Manufacturer |  Microsemi |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
FEATURES
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● Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance
● Very low thermal resistance
● Reverse polarity available upon request
MAXIMUM RATINGS
@ 25° C (unless otherwise specified)DESCRIPTION
Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25° C SYMBOL BVDSS BVDGR VGS VGSM ID25 ID100 IDM IAR EAR EAS dv/dt PD Tj Tstg IS ISM θJC DRAIN MAX. 900 900 +/-20 +/-30 10 6 40 10 30 tbd 5.0 300 -55 to +150 -55 to +150 10 40 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps mJ mJ V/ns Watts ° C ° C Amps Amps ° C/W Drain-to-Gate Breakdown Voltage @ TJ ≥ 25° C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100° C Tj= 25° C Tj= Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Ch...