Microsemi MSAGX75F60A
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
| Part No. | MSAGX75F60A |
|---|---|
| Datasheet | MSAGX75F60A Download |
| Manufacturer |  Microsemi |
| Description | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| Buy | Stock & Price |
FEATURES
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● Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75F60B high frequency IGBT, low switching losses
MAXIMUM RATINGS
@ 25° C (unless otherwise specified)DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg θJC MAX. 600 600 +/-20 +/-30 75 50 200 100 300 -55 to +150 -55 to +150 0.25 UNIT Volts Volts Volts Volts Amps Amps Amps Watts °C °C °C/W Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 30 µH (clamped inductive load), R G= 2.7Ω, Tj= 125°C, VCE= 0.8 x V CES Power Dissipatio...