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MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET
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Product Overview
The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B4 device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.
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Features
The following are key features of the MSC015SMA070B4 device:
Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant
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MSC015SMA070B4 Datasheet
