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MSC015SMA070B4 Datasheet Silicon Carbide N-channel Power MOSFET

Manufacturer: Microsemi (now Microchip Technology)

Overview: MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B4 device is a 700 V, 15 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense. 1.

Key Features

  • The following are key features of the MSC015SMA070B4 device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 °C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC015SMA070B4 device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Microchip Logo MSC015SMA070B4 N-Channel MOSFET Microchip

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