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MSC040SMA120B - Silicon Carbide N-Channel Power MOSFET

Features

  • The following are key features of the MSC040SMA120B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175°C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC040SMA120B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lo.

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MSC040SMA120B Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC040SMA120B device is a 1200 V, 40 mΩ SiC MOSFET in a TO-247 package. 1.1 Features The following are key features of the MSC040SMA120B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175°C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.
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