MSC2X30SDA120J Datasheet Dual Silicon Carbide Schottky Barrier Diodes

Manufacturer: Microsemi (now Microchip Technology)

Overview: MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	MSC2X30SDA120J
Manufacturer	Microsemi (now Microchip Technology)
File Size	1.65 MB
Description	Dual Silicon Carbide Schottky Barrier Diodes
Datasheet	MSC2X30SDA120J MSC2X31SDA120J Datasheet (PDF)

Key Features

The following are key features of the MSC2X31SDA120J and MSC2X30SDA120J devices:.
No reverse recovery.
Low forward voltage.
Low leakage current.
Avalanche-energy rated.
RoHS compliant.
Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X31SDA120J and MSC2X30SDA120J devices:.
Outstanding performance at high-frequency operation.
Direct mounting to heatsink (isolated package).
Low junction-to-cas.

MSC2X30SDA120J Distributor

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