MSC2X30SDA120J Overview
MSC2X31/30SDA120J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X31/30SDA120J are dual 1200 V, 30 A SiC SBD devices in a SOT-227 package. Figure 1 Parallel MSC2X31SDA120J Figure 2...
MSC2X30SDA120J Key Features
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- RoHS pliant
- Isolated voltage to 2500 V
- Outstanding performance at high-frequency operation
- Direct mounting to heatsink (isolated package)
- Low junction-to-case thermal resistance
- RoHS pliant