MSC2X50SDA120J
MSC2X50SDA120J is Dual Silicon Carbide Schottky Barrier Diodes manufactured by Microsemi.
- Part of the MSC2X51SDA120J comparator family.
- Part of the MSC2X51SDA120J comparator family.
Overview
The Silicon Carbide (Si C) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC2X51/50SDA120J are dual 1200 V, 50 A Si C SBD devices in a SOT-227 package.
Figure 1
- Parallel MSC2X51SDA120J
Figure 2
- Anti-parallel MSC2X50SDA120J
Features
The following are key features of the MSC2X51SDA120J and MSC2X50SDA120J devices:
- No reverse recovery
- Low forward voltage
- Low leakage current
- Avalanche-energy rated
- Ro HS pliant
- Isolated voltage to 2500 V
Benefits
The following are benefits of the MSC2X51SDA120J and MSC2X50SDA120J devices:
- High switching frequency
- Low switching losses
- Low noise (EMI) switching
- Higher reliability systems
- Increased system power density
- Direct mounting to the heat sink (isolated package)
053-4108 MSC2X51/50SDA120J Datasheet Revision A
Product Overview
Applications
The MSC2X51SDA120J and MSC2X50SDA120J devices are designed for the following applications:
- Power factor correction (PFC)
- Anti-parallel diode
◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers
- Freewheeling diode ◦ Switch-mode power supply ◦ Inverters/converters
- Snubber/clamp diode
053-4108 MSC2X51/50SDA120J Datasheet Revision A
Device Specifications
Device Specifications
This section shows the specifications for the MSC2X51SDA120J and MSC2X50SDA120J devices.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings per diode for the MSC2X51SDA120J and MSC2X50SDA120J devices. TC = 25 °C, unless otherwise specified. Table 1
- Absolute Maximum...
