MSC750SMA170B Datasheet | Microsemi

Overview The silicon carbide (Si C) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC750SMA170B device is a 1700 V, 750 mΩ Si C MOSFET in a TO-247 package. Features The following are key features of the MSC750SMA170B device: - Low capacitances and low gate charge - Fast switching speed due to low internal gate resistance (ESR) - Stable operation at high junction temperature, TJ(max) = 175 °C - Fast and reliable body diode - Superior avalanche ruggedness - Ro HS pliant Benefits The following are benefits of the MSC750SMA170B device: - High efficiency to enable lighter, more pact system - Simple to drive and easy to parallel - Improved thermal capabilities and lower switching losses - Eliminates the need for external freewheeling diode - Lower system cost of ownership Applications The MSC750SMA170B device is designed for the following applications: - PV inverter, converter, and industrial motor drives - Smart grid transmission and distribution - Induction heating and welding - H/EV powertrain and EV charger - Power supply and distribution 050-7773 MSC750SMA170B Datasheet Revision B Device Specifications Device Specifications This section shows the specifications of the MSC750SMA170B device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC750SMA170B device. Table 1 - Absolute Maximum Ratings Symbol Characteristic Ratings Unit VDSS Drain source voltage Continuous drain current at TC = 25...