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MX086-4 Datasheet Battery Bypass Charge Diode

Manufacturer: Microsemi (now Microchip Technology)

Overview: .. 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX086-4 60 Volts 50 Amps 2 µs BATTERY BYPASS CHARGE DIODE SYMBOL VRRM IF(ave) IFSM Tj Tstg θJC MIN 2.5 2.75 3.

General Description

Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc≤ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resistance, Junction to Case: DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 µs, d/c≤ 2% SYMBOL IR VF1 VF2 VF3 CONDITIONS VR= 60 Vdc, Tc= 25°C IF= 100 mA, Tc= 25°C IF= 5 A, Tc= 25°C IF = 10A, Tc= 25°C MAX.

60 50 300 -20 to +275 -65 to +175 0.9 TYP.

1 MAX 10 3.0 3.73 3.86 UNIT Volts Amps Amps °C °C °C/W UNIT µA V V Mechanical Outline ..

Key Features

  • Standard spacecraft screening is per Microsemi PS11.50 “S” (no suffix letter required, MX086-4 is only “S” screened) Designed for battery cell bypass Passivated mesa structure for very low leakage currents 4 die stacked in one package Hermetically sealed, ceramic surface mount power package Maximum Ratings @ 25°C (unless otherwise specified).

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MX086-4 Distributor