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MX086-4

Manufacturer: Microsemi (now Microchip Technology)

MX086-4 datasheet by Microsemi (now Microchip Technology).

MX086-4 datasheet preview

MX086-4 Datasheet Details

Part number MX086-4
Datasheet MX086-4_Microsemi.pdf
File Size 49.82 KB
Manufacturer Microsemi (now Microchip Technology)
Description Battery Bypass Charge Diode

MX086-4 Overview

Peak Repetitive Reverse Voltage (NOT A BLOCKING DIODE!) Average Rectified Forward Current, Tc≤ 125°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range , Junction to Case: 60 50 300 -20 to +275 -65 to +175 0.9 TYP. 1 MAX 10 3.0 3.73 3.86 UNIT Volts Amps Amps °C °C °C/W UNIT µA V V Mechanical Outline.

MX086-4 Key Features

  • Standard spacecraft screening is per Microsemi PS11.50 “S” (no suffix letter required, MX086-4 is only “S” screened) Des
Microsemi (now Microchip Technology) logo - Manufacturer

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MX086-4 Distributor

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