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MXP1018-C - Photo SCR Chip

Key Features

  • Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable Anode is backside of die Backside metallization - Gold Die Attach methods: eutectic or epoxy Electrical Characteristics @ 25oC SYMBOL VDM VRM IDM IRM I GT IH t ON.

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2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1018-C Photo SCR Chip Features • • • • • • • Light Activated Photo SCR Planar PNPN High Voltage Cathode and Gate pads are Aluminum Wire bondable Anode is backside of die Backside metallization - Gold Die Attach methods: eutectic or epoxy Electrical Characteristics @ 25oC SYMBOL VDM VRM IDM IRM I GT IH t ON CHARACT ERIST IC Off-State Voltage Reverse Voltage Off-State Leakage Current Reverse Leakage Gate Trigger Current Holding Current Turn-On Time CONDIT IONS MIN T YP 660 550 0.2 0.5 1.3 40 5 MAX UNIT S Volts Volts µAmps µAmps µAmps µAmps µseconds Data Sheet # MSC1330.