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MXP1126-C - Photo Transistor Chip

Features

  • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMB OL BVCEO BVEBO BVCBO ID hFE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1126-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMB OL BVCEO BVEBO BVCBO ID hFE CHARACT ERIST IC Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector Current Beta IC = 100 µA IE = 100 µA IC = 100 µA VCE = 10 Volts CONDIT IONS MIN T YP 500 20 500 30 25 MAX UNIT S Volts Volts Volts nAmps VCE = 5 Volts, IC = 1 mA Data Sheet # MSC1341.
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