Datasheet4U Logo Datasheet4U.com

MXP1158 - Phototransistor Optocoupler

Description

The MXP1158 consists of a light emitting diode and an NPN phototransistor.

The device is available in a hermetic 8-pin DIP package.

Features

  • 2,500 Volt electrical isolation Standard 8-pin DIP package High current transfer ratio for low IF Screening similar to JANTX, JANTXV or JANS equivalent NC 2 5 3 6.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MXP1007AT 100V N-ch Power MOSFET MaxPower
MXP1008AT 100V N-Channel MOSFET MaxPower Semiconductor
MXP120A045FL 1200 V N-Channel SiC MOSFET Vishay
MXP120A045FW 1200V N-Channel SiC MOSFET Vishay
MXP120A080FL 1200V N-Channel SiC MOSFET Vishay

Other Datasheets by Microsemi (Microchip)

Part Number Description
MXP1152 NPN Photo Transistor Hybrid Optocoupler
MXP1156 Photovoltaic Optocoupler
MXP1123 High Speed Photo Detectors
MXP1123HS-C High Speed Photo Detectors
MXP1126-C Photo Transistor Chip

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP 1158 Phototransistor Optocoupler Features • • • • 2,500 Volt electrical isolation Standard 8-pin DIP package High current transfer ratio for low IF Screening similar to JANTX, JANTXV or JANS equivalent NC 2 5 3 6 Description • The MXP1158 consists of a light emitting diode and an NPN phototransistor. • The device is available in a hermetic 8-pin DIP package. Electrical Characteristics @ 25oC SYMBOL IC(on) VCEsat BVceo BVebo ICE(off) VF IR tR tF CHARCTERISTIC On-State Collector Current Saturation Voltage Breakdown Voltage Breakdown Voltage Off-State Leakage Current Input Forward Voltage Input Reverse Current Rise Time Fall Time CONDITIONS IF = 1 mA, VCE = 5 Volts IF = 2 mA, IC = 1.0 mA IC = 1.
Published: |