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MXP18-C - Monolithic Photodiode Array-Chip

Features

  • Dielectrically Isolated Diodes Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMBOL VOC ISC VB.

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2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP18-C Monolithic Photodiode Array - Chip Features • • • • Dielectrically Isolated Diodes Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMBOL VOC ISC VB CHARACTERISTIC Open Circuit Voltage Short Circuit Current Reverse Breakdown Voltage CONDITIONS 10 mW/cm2, wavelength = 850 nm 10 mW/cm2, wavelength = 850 nm IR = 10 uA MIN 9.5 3 20 TYP MAX UNITS Volts uA Volts Data Sheet # MSC1337.
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