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MXP22-C - Monolithic Photodiode Array-Chip

Features

  • Dielectrically Isolated Diodes Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy o Electrical Characteristic s @ 25 SYMBOL VOC ISC VB C.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP22-C Monolithic Photodiode Array - Chip Features • • • • Dielectrically Isolated Diodes Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy o Electrical Characteristic s @ 25 SYMBOL VOC ISC VB C CONDITIONS 10 mW/cm2, wavelength = 850 nm 10 mW/cm2, wavelength = 850 nm IR = 10 uA MIN 10 3.5 20 TYP MAX UNITS Volts uA Volts CHARACTERISTIC Open Circuit Voltage Short Circuit Current Reverse Breakdown Voltage Data Sheet # MSC1338.
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