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MXP415-C - Photo Transistor Chip

Key Features

  • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMB OL BVCEO BVEBO BVCBO VCESAT ID hFE.

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2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP415-C Photo Transistor Chip Features • • • • • Light Activated Photo Transistor Chip Planar NPN Aluminum Wire bondable Backside Metallization - Gold Die Attach methods: Eutectic or Epoxy Electrical Characteristics @ 25oC SYMB OL BVCEO BVEBO BVCBO VCESAT ID hFE CHARACT ERIST IC Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Saturation Collector Current Beta IC = 100 µA IE = 100 µA IC = 100 µA CONDIT IONS MIN 30 4 40 T YP MAX UNIT S Volts Volts Volts IC = 1.0 mA, IB = 40 µA VCE = 10 Volts VCE = 5 Volts, IB = 4 µA 2,000 350 90 mVolts nAmps Data Sheet # MSC1342.