Datasheet4U Logo Datasheet4U.com

SD1143 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF Communications.

It withstands very high VSWR under operating conditions.

Features

  • !"175 MHz !"12.5 Volts !"Common Emitter !"POUT = 10 W Min. !"GP = 10 dB Gain.

📥 Download Datasheet

Datasheet preview – SD1143

Datasheet Details

Part number SD1143
Manufacturer Microsemi
File Size 170.88 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet SD1143 Datasheet
Additional preview pages of the SD1143 datasheet.

📁 Similar Datasheet

  • SD1143 - (SD1xxx) Transistors (SGS-Thomson)
  • SD1143 - RF AND MICROWAVE TRANSISTORS (Advanced Power Technology)
  • SD1143 - HG RF POWER TRANSISTOR (HGSemi)
  • SD1143 - NPN SILICON RF POWER TRANSISTOR (ASI)
  • SD1143-01 - RF AND MICROWAVE TRANSISTORS (Advanced Power Technology)
  • SD11428 - 1200V Silicon Carbide IGBT (Solitron Devices)
  • SD11461 - N-Channel Power MOSFET (Solitron Devices)
  • SD1100 - N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE D MOS POWER FETS (ETC)
  • SD1100C - STANDARD RECOVERY DIODES Hockey Puk Version (International Rectifier)
  • SD1100P - (SD120P - SD1100P) Schottky Barrier Rectifiers (TSC)
Other Datasheets by Microsemi
  • SD1060 - RF & MICROWAVE TRANSISTORS

Full PDF Text Transcription

Click to expand full text
WWW.Microsemi .COM RF PRODUCTS DIVISION SD1143 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW DESCRIPTION The SD1143 is a 12.2 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF Communications. It withstands very high VSWR under operating conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES !"175 MHz !"12.5 Volts !"Common Emitter !"POUT = 10 W Min. !"GP = 10 dB Gain APPLICATIONS/BENEFITS !"VHF Mobile Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter Value VCBO VCEO VCES VEBO IC PDISS TJ Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature 36 18 36 4.0 2.
Published: |