SMAJ5.0e3 Datasheet | Microsemi

Description and applications This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or radiated electrostatic discharge phenomena before entering sensitive ponent regions of a circuit design. Response time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can also be used for protecting other sensitive ponents from secondary lightning effects per IEC61000-4-5 and class levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands and special applications. - Ro HS pliant (2002/95/EC), MSL level 1 (J-STD-020) - Qualified to automotive grade - AEC Q101 - Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions. Maximum ratings and characteristics(1) Symbol PPPM IPPM PM(AV) IFSM VF RΘJL RΘJA TSTG TJ Parameter Peak power dissipation with a 10/1000µs waveform (2)(3) (fig.1) Peak pulse current with a 10/1000µs waveform (2) (fig. 3) Steady state power dissipation at TL = 75ºC, lead lengths 0.375” (9.5mm) (3) Non repetitive peak forward surge current (8.3ms single half sine wave) unidirectional only (4) Maximum instantaneous forward voltage at 25A for unidirectional only (5) Typical thermal resistance junction to lead Typical thermal resistance junction to ambient Storage temperature Junction temperature (1) All ratings at 25ºC unless specified otherwise (2) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25ºC per Fig. 2. rating is 300W above 78V. (3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm) (4) Mounted on minimum remended pad layout (5) VF=3.5V for devices of VBR < 220V and VF=5.0V maximum for devices of VBR > 220V Value 400 See next table Unit W A 3.5 / 5.0 30 120 -55 to +150 -55 to +150 ºC/W...