Microsemi VRF148AMP
The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.VRF148AMP Specifications
- Mount Type : Screw
- Min Breakdown Voltage : 170V
- Terminals : 4
- Max Power Dissipation : 115W
- Max Frequency : 175MHz
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | VRF148AMP |
|---|---|
| Datasheet | VRF148AMP Download |
| Manufacturer |  Microsemi |
| Description | RF POWER VERTICAL MOSFET |
| Buy | Stock & Price |
FEATURES
● Improved Ruggedness V(BR)DSS = 170 V● 30W with 20dB Typical Gain @ 30MHz, 50V
● 30W with 16dB Typical Gain @ 175MHz, 50V
● Excellent Stability & Low IMD
● Common Source Configuration
● Available in Matched Pairs
● 30:1 Load VSWR Capability at Specified Operating Conditions
● Nitride Passivated
● Refractory Gold Metallization
● High Voltage Replacement for MRF148A
● RoHS Compliant
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25°C unless otherwise specified VRF148A(MP) Unit 170 V 6 A ±40 V 115 W -65 to 150 °C 200 StaticELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 1mA) On State Drain Voltage (ID(ON) = 2.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) Gate-Source Leakage Current...
