Microsemi VRF152MP
The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.FEATURES
● Improved Ruggedness V(BR)DSS = 130V● 150W with 22dB Typical Gain @ 30MHz, 50V
● 150W with 14dB Typical Gain @ 175MHz, 50V
● Excellent Stability & Low IMD
● Common Source Configuration
● Available in Matched Pairs
● 70:1 Load VSWR Capability at Specified Operating Conditions
● Nitride Passivated
● Refractory Gold Metallization
● Low Rds Replacement for MRF151/ BLF177/ SD2941
● RoHS Compliant
MAXIMUM RATINGS
Symbol VDSS ID VGS PD TSTG TJ Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature All Ratings: TC =25°C unless otherwise specified VRF152(MP) Unit 130 V 20 A ±40 V 300 W -65 to 150 °C 200 StaticELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS RDS(ON) IDSS IGSS Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 50mA) Drain-Source On-State Resistance 1 (VGS = 10V, ID = 10A) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0V) Gate-Source Leakag...