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VRF154FL - RF Power Vertical MOSFET

Key Features

  • Designed For 2 - 100MHz Operation.
  • 600W with 17dB Typical Gain @ 30MHz, 50V.
  • Excellent Stability & Low IMD.
  • Common Source Configuration.
  • Economical Flangeless Package.
  • Nitride Passivated.
  • Refractory Gold Metallization Maximum Ratings Symbol VDD VDGO ID VGS PD TSTG TJ All Ratings: TC = 25°C unless otherwise specified VRF154FL 160 160 60 ±40 1350 -65 to 150 200 Unit Volts Amps Volts Watts °C Parameter Drain-Source Voltage Drain-Gate.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VRF154FL 50V 600W 80MHz RF POWER VERTICAL MOSFET The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion. www.DataSheet4U.