Microsemi VRF154FL
The VRF154FL is a gold metallized silicon, n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, and inter-modulation distortion.| Part No. | VRF154FL |
|---|---|
| Datasheet | VRF154FL Download |
| Manufacturer |  Microsemi |
| Description | RF Power Vertical MOSFET |
| Buy | Stock & Price |
FEATURES
● Designed For 2 - 100MHz Operation● 600W with 17dB Typical Gain @ 30MHz, 50V
● Excellent Stability & Low IMD
● Common Source Configuration
● Economical Flangeless Package
● Nitride Passivated
● Refractory Gold Metallization
MAXIMUM RATINGS
Symbol VDD VDGO ID VGS PD TSTG TJ All Ratings: TC = 25°C unless otherwise specified VRF154FL 160 160 60 ±40 1350 -65 to 150 200 Unit Volts Amps Volts Watts °C Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Device Dissipation @ TC = 25°C Storage Temperature Range Operating Junction Temperature StaticELECTRICAL CHARACTERISTICS
Symbol V(BR)DSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) On State Drain Voltage (ID(ON) = 40A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 50V, VGS = 0V) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Forward Transconductance (VDS = 10V, ID = 20A) Gate Threshold Voltage (VDS = 10V, ID = 100mA)...
