2N6306 Description
Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc VCE = 700 Vdc; Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 3.0 Adc;.
2N6306 is NPN POWER SILICON TRANSISTOR manufactured by Microsemi .
| Manufacturer | Part Number | Description |
|---|---|---|
| 2N6306 | NPN SILICON TRANSISTOR | |
SavantIC |
2N6306 | Silicon Power Transistors |
Seme LAB |
2N6306 | Bipolar NPN Device |
Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 500 Vdc; VBE = 1.5 Vdc VCE = 700 Vdc; Unit ON CHARACTERISTICS (2) Forward-Current Transfer Ratio IC = 3.0 Adc;.