UPF1N100 Description
This device is an N-Channel enhancement mode, high density MOSFET. It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three leaded package.
UPF1N100 Key Features
- CHANNEL MOSFET
- 40 to +125 Steady-state Thermal Resistance, Junction-to-Tab RθJ-TAB 2.5 UNIT Volts Volts Amps Amps Amps mJ mJ °C °C/Watt