ICE10N60FP Datasheet PDF

FEATURES

: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems

MAXIMUM RATINGS

@ Tj = 25°C, Unless Otherwise Specified Symbol Parameter ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque Pin

DESCRIPTION

: TO-220 G Value 10 30 340 5 50 ±20 ±30 35 -55 to +150 50 Unit A A mJ A V/ns V W °C Ncm Conditions TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 2.5 screws D S Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 3.5 RthJA Thermal Resistance, Junction to Ambient - - 80 Tsold S...