Datasheet Details
| Part number | ICE10N60FP |
|---|---|
| Manufacturer | Micross |
| File Size | 707.13 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 ICE10N60FP Datasheet
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General Description
TO-220
G
Value
10 30 340 5 50
±20 ±30
35
-55 to +150 50
Unit A A mJ A
V/ns
V
W °C Ncm
Conditions TC = 25°C TC = 25°C ID = 8.3A Limited by Tjmax VDS = 480V, ID = 10A, Tj = 125°C Static AC (f>Hz) TC = 25°C
M 2.5 screws
D S
Symbol Parameter
Values Min Typ Max
Unit Conditions
Thermal Characte
Key Features
- r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate.