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ICE13N65

Manufacturer: Micross
ICE13N65 datasheet preview

Datasheet Details

Part number ICE13N65
Datasheet ICE13N65-MicrossComponentspdf
File Size 713.84 KB
Manufacturer Micross
Description N-Channel MOSFET
ICE13N65 page 2 ICE13N65 page 3

ICE13N65 Overview

TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.

ICE13N65 Key Features

  • 55 to +150 60
  • 0.25 0.28
  • RGS Gate Resistance
  • °C/W °C
  • 600 -5- 15
  • nC VDS = 480V, ID = 13A, VGS = 0 to 10V
  • 0.9 1.2
  • 400 -6- 35
  • V VGS = 0V, IS = IF ns

ICE13N65 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Icemos Logo ICE13N65 N-Channel Enhancement Mode MOSFET Icemos
Icemos Logo ICE13N65FP N-Channel Enhancement Mode MOSFET Icemos
Micross logo - Manufacturer

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