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ICE22N65W

Manufacturer: Micross
ICE22N65W datasheet preview

Datasheet Details

Part number ICE22N65W
Datasheet ICE22N65W-MicrossComponentspdf
File Size 694.16 KB
Manufacturer Micross
Description N-Channel MOSFET
ICE22N65W page 2 ICE22N65W page 3

ICE22N65W Overview

TO-247 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source.

ICE22N65W Key Features

  • 55 to +150 60
  • Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
  • IGSS RDS(on)
  • RGS Gate Resistance
  • °C/W °C
  • 943 -8- 22
  • 10 -5- 67
  • pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2-ID- RDS, ID = 11A
  • 1.0 1.2
  • 423 -8- 34

ICE22N65W from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Icemos Logo ICE22N65W N-Channel Enhancement Mode MOSFET Icemos
Micross logo - Manufacturer

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