Datasheet Summary
N-Channel Enhancement Mode MOSFET
Features
: rLow DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
22A 650V 0.165Ω 82nC
Pin Description:
TO-247
Max Min Typ Typ
Symbol Parameter
Value
Unit Conditions
ID, pulse EAS IAR dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt...
