• Part: ICE47N60W
  • Manufacturer: Micross
  • Size: 0.97 MB
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ICE47N60W Description

TO-247 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt.

ICE47N60W Key Features

  • 55 to +150 60
  • RthJA Thermal Resistance, Junction to Ambient
  • lowed At Leads
  • IGSS RDS(on)
  • RGS Gate Resistance
  • 0.063 0.17
  • °C/W °C
  • pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2-ID- RDS, ID = 24A
  • nC VDS = 480V, ID = 47A, VGS = 0 to10V
  • 0.95 1.2