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ICE73N199

Manufacturer: Micross

ICE73N199 datasheet by Micross.

ICE73N199 datasheet preview

ICE73N199 Datasheet Details

Part number ICE73N199
Datasheet ICE73N199-MicrossComponentspdf
File Size 563.93 KB
Manufacturer Micross
Description N-Channel MOSFET
ICE73N199 page 2 ICE73N199 page 3

ICE73N199 Overview

TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt.

ICE73N199 Key Features

  • 55 to +150 60
  • 260 lowed At Leads
  • 0.23 0.25
  • RGS Gate Resistance
  • °C/W °C
  • 980 -9- 19
  • nC VDS = 480V, ID = 10A, VGS = 10V
  • 0.9 1.2
  • V VGS = 0V, IS = IF ns

ICE73N199 from other manufacturers

View ICE73N199 datasheet index

Brand Logo Part Number Description Other Manufacturers
Icemos Logo ICE73N199 N-Channel MOSFET Icemos
Micross logo - Manufacturer

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