ICE7N60 Datasheet N-Channel MOSFET

Manufacturer: Micross

Overview: ICE7N60 N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 7A 600V 0.

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ICE7N60 n-channel mosfet by Micross - Datasheet Preview

Datasheet Details

Part number	ICE7N60
Manufacturer	Micross
File Size	710.79 KB
Description	N-Channel MOSFET
Download	ICE7N60 Download (PDF)

General Description

: TO-220 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operating and Storage Temperature Mounting Torque 7 21 170 3.5 50 ±20 ±30 65 -55 to +150 60 A A mJ A V/ns V W °C Ncm TC = 25°C TC = 25°C ID = 3.5A Limited by Tjmax VDS = 480V, ID = 7A, Tj = 125°C Static AC (f>Hz) TC = 25°C M 3 & 3.5 screws Max Min Typ Typ D S Symbol Parameter Values Min Typ Max Unit Conditions Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 1.9 RthJA Thermal Resistance, Junction to Ambient - - 68 Tsold Soldering Temperature, Wave Soldering Only Al- - - 260 lowed At Leads Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS VGS(th) IDSS Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current 600 - - 2.1 3 3.9 - 0.1 1 - - 100 IGSS RDS(on) Gate Source Leakage Current Drain to Source On-State Resistance - - 100 - 0.52 0.60 - 1.3 - RGS Gate Resistance -6- °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s V VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA µA VDS = 600V, VGS = 0V, Tj = 25°C VDS = 600V, VGS = 0V, Tj = 150°C nA VGS = ±20v, VDS = 0V Ω VGS = 10V, ID = 3.5A, Tj = 25°C VGS = 10V, ID = 3.5A, Tj = 150°C Ω f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +

Key Features

r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Pin.

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