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1N5811C - Superfast Rectifier Diode

Key Features

  • VR = 150V IR = 5.0µA trr = 30ns VF = 0.875V at IF = 4.0A 1N5811C 150V Axial Leaded Superfast Rectifier Diode Quick Reference Data ‹ Low reverse leakage current ‹ Very low reverse recovery time ‹ Hermetically sealed ‹ Good thermal shock resistance ‹ Low forward voltage drop Absolute Maximum Ratings Electrical specifications @ TA = 25oC unless otherwise specified. Parameter Symbol Maximum Reccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage VRRM VRMS Vdc Maximum A.

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Datasheet Details

Part number 1N5811C
Manufacturer Micross
File Size 148.68 KB
Description Superfast Rectifier Diode
Datasheet download datasheet 1N5811C Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HIGH-RELIABILITY PRODUCTS Features VR = 150V IR = 5.0µA trr = 30ns VF = 0.875V at IF = 4.0A 1N5811C 150V Axial Leaded Superfast Rectifier Diode Quick Reference Data ‹ Low reverse leakage current ‹ Very low reverse recovery time ‹ Hermetically sealed ‹ Good thermal shock resistance ‹ Low forward voltage drop Absolute Maximum Ratings Electrical specifications @ TA = 25oC unless otherwise specified. Parameter Symbol Maximum Reccurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC blocking Voltage VRRM VRMS Vdc Maximum Average Forward Rectified Current 3/8”lead length at TA=-75oC IFAV Peak Forward Surge Current 8.3ms single Half sinewave IFSM superimposed on rated load Maximum Instantaneous Forward Voltage at 4.