2N3954
2N3954 is MONOLITHIC DUAL N-CHANNEL JFET manufactured by Micross.
FEATURES
LOW DRIFT LOW LEAKAGE LOW NOISE ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) |∆ VGS1‐2 /∆T|= 5µV/°C max. IG = 20p A TYP. en = 10n V/√Hz TYP.
2N3954 Applications:
- - Wideband Differential Amps High Input Impedance Amplifiers
Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 60V ‐VDSO Drain to Source Voltage 60V ‐IG(f) Gate Forward Current 50m A Maximum Power Dissipation Device Dissipation @ Free Air - Total 400m W @ 25°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 10 µV/°C VDG=20V, ID=200µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 5 m V VDG=20V, ID=200µA MAX. ‐‐ ‐‐ 3000 1000 3 5 5 4.5 4 50 50 ‐‐ 100 5 1 0.1 ‐‐ ‐‐ 0.5 15 6 2 ‐‐ UNITS V V µmho µmho % m A % V V p A n A p A p A µmho µmho µmho d B d B d B n V/√Hz p F p F p F CONDITIONS VDS = 0 ID=1µA I G= 1n A ID= 0 IS= 0 VDG= 20V VGS= 0V f = 1k Hz VDG= 20V ID= 200µA VDG= 20V VGS= 0V VDS= 20V ID= 1n A VDS=20V ID=200µA VDG= 20V ID= 200µA TA= +125°C VDG= 10V ID= 200µA VDG= 20V VDS= 0 VDG= 20V VGS= 0V VDG= 20V ID= 200µA
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ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVGSS Breakdown Voltage 60 ‐‐ BVGGO Gate‐To‐Gate Breakdown 60 ‐‐ TRANSCONDUCTANCE Yf SS Full Conduction 1000 2000 Yf S Typical Operation 500 700 |YFS1‐2 / Y FS| Mismatch ‐‐ 0.6 DRAIN CURRENT IDSS Full Conduction 0.5 2 |IDSS1‐2 / IDSS| Mismatch at Full Conduction ‐‐ 1 ...
