2N4391
2N4391 is Single N-Channel JFET manufactured by Micross.
Features
DIRECT REPLACEMENT FOR SILICONIX 2N4391 LOW ON RESISTANCE r DS(on) ≤ 30Ω LOW GATE OPERATING CURRENT ID(off) = 5p A FAST SWITCHING t(ON) ≤= 15ns 2N4391 Benefits: ABSOLUTE MAXIMUM RATINGS1 @ 25°C (unless otherwise noted)
- Low Error Voltage Maximum Temperatures
- High-Speed Analog Circuit Performance Storage Temperature ‐65°C to +200°C
- Negligible “Off-Error,” Excellent Accuracy
- Good Frequency Response, Low Glitches Operating Junction Temperature ‐55°C to +200°C
- Eliminates Additional Buffering Maximum Power Dissipation Continuous Power Dissipation 1800m W 2N4391 Applications: MAXIMUM CURRENT
- Analog Switches Gate Current (Note 1) IG = 50m A
- Choppers, Sample-and-Hold MAXIMUM VOLTAGES
- Normally “On” Switches, Current Limiters Gate to Drain Voltage / Gate to Source Voltage ‐40V 2N4391 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐40 ‐‐ ‐‐ IG = ‐1µA, VDS = 0V V VGS(off) Gate to Source Cutoff Voltage ‐4 ‐‐ ‐10 VDS = 20V, ID = 1n A VGS(F) Gate to Source Forward Voltage ‐‐ 0.7 1 IG = 1m A, VDS = 0V VDS(on) Drain to Source On Voltage ‐‐ 0.25 ‐‐ VGS = 0V, ID = 3m A VDS(on) Drain to Source On Voltage ‐‐ 0.3 ‐‐ VGS = 0V, ID = 6m A VDS(on) Drain to Source On Voltage ‐‐ 0.35 0.4 VGS = 0V, ID = 12m A IDSS Drain to Source Saturation Current2 50 ‐‐ 150 m A VDS = 20V, VGS = 0V IGSS Gate Reverse Current ‐‐ ‐5 ‐100 VGS = ‐20V, VDS = 0V IG Gate Operating Current ‐‐ ‐5 ‐‐ VDG = 15V, ID = 10m A p A ‐‐ 5 ‐‐ VDS = 20V, VGS = ‐5V Drain Cutoff Current ID(off) ‐‐ 5 ‐‐ VDS = 20V, VGS = ‐7V ‐‐ 5 100 VDS = 20V, VGS = ‐12V r DS(on) Drain to Source On Resistance ‐‐ ‐‐ 30 Ω VGS = 0V, ID = 1m A 2N4391 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC TYP MIN MAX UNITS CONDITIONS The...
