FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5019 ZERO OFFSET VOLTAGE LOW ON RESISTANCE ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) rDS(on) ≤ 150Ω Maximum Temperatures Storage Temperature ‐55°C to +200°C Low Insertion Loss Operating Junction Temperature ‐55°C to +200°C No offset or error voltage generated by closed Maximum Power Dissipation switch Continuous Power Dissipation 500mW Purely resistive MAXIMUM CURRENT 2N5019 APPLICATIONS
: Gate Current (Note 1) IG = ‐50mA Analog Switches MAXIMUM VOLTAGES Commutators Gate to Drain Voltage VGDS = 30V Choppers Gate to Source Voltage VGSS = 30V 2N5019 ELECTRICAL CHARACTERISTICS
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage 30 ‐‐ ‐‐ IG = 1µA, VDS = 0V V VGS(off) Gate to Source Cutoff Voltage ‐‐ ‐‐ 5 VDS = ‐15V, ID = ‐1µA VDS(on) Drain to Source On Voltage ‐‐ ‐‐ ‐0.5 VGS = 0V, ID = ‐3mA IDSS Drain to Source Saturation Current (Note 2) ‐5 ‐‐ ‐‐ mA...
Micross