2N5905
Overview
- Tight Tracking Good matching Ultra Low Leakage Low Drift Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10mA ‐IG Gate Reverse Current 10µA Maximum Power Dissipation Device Dissipation @ Free Air - Total 40mW @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | VGS1‐2 / T| max. DRIFT VS. 40 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 15 mV VDG=10V, ID=30µA TYP. 60 ‐‐ 300 100 1 400 2 2 ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 1 ‐‐ 0.1 0.01 90 90 ‐‐ 20 ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ 500 200 5 1000 5 4.5 4 3 3 5 10 ‐‐ 5 0.1 0.1 ‐‐ ‐‐ 1 70 3 1.5 0.1 UNITS V V µmho µmho % µA % V V pA nA pA nA pA
