2N5912C Datasheet PDF

Micross 2N5912C

The 2N5912C are monolithic dual JFETS. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for use as wideband differential amplifiers in demanding test and measurement applications.

Part No.	2N5912C
Datasheet	2N5912C Download
Manufacturer	Micross
Description	N-CHANNEL JFET
Buy	Stock & Price

FEATURES

Improved Direct Replacement for SILICONIX & NATIONAL 2N5912C LOW NOISE (10KHz) en~ 4nV/√Hz HIGH TRANSCONDUCTANCE (100MHz) gfs ≥ 4000µS

ABSOLUTE MAXIMUM RATINGS

1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source MIN ‐‐ ‐‐ 0.95 ‐‐ TYP ‐‐ ‐‐ ‐‐ MAX 40 40 1 UNITS mV µV/°C % ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA ‐25V ‐25V CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V 2N5912C

APPLICATIONS

: Wideband Differential Amps High-Speed,Temp-Compensated SingleEnded Input Amps High-Speed Comparators Impedance Converters and vibrations detectors. MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage C...