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AS4DDR264M72PBG1 - 4.8 Gb SDRAM-DDR2

Features

  • DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package:.
  • Proprietary Enchanced Die Stacked iPEM.
  • 208 Plastic Ball Grid Array (PBGA), 16 x 23mm.
  • 1.00mm ball pitch Differential data strobe (DQS, DQS#) per byte Internal, pipelined, double data rate architecture 4n-bit prefetch architecture DLL for alignment of DQ and DQS transitions with clock signal Eight internal banks for concurrent operation (Per DDR2 SDRAM Die) Programmable Burst l.

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Datasheet Details

Part number AS4DDR264M72PBG1
Manufacturer Micross
File Size 338.73 KB
Description 4.8 Gb SDRAM-DDR2
Datasheet download datasheet AS4DDR264M72PBG1 Datasheet
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Full PDF Text Transcription

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iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM • 208 Plastic Ball Grid Array (PBGA), 16 x 23mm • 1.00mm ball pitch Differential data strobe (DQS, DQS#) per byte Internal, pipelined, double data rate architecture 4n-bit prefetch architecture DLL for alignment of DQ and DQS transitions with clock signal Eight internal banks for concurrent operation (Per DDR2 SDRAM Die) Programmable Burst lengths: 4 or 8 Auto Refresh and Self Refresh Modes (I/T Version) On Die Termination (ODT) Adjustable data – output drive strength 1.8V ±0.
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