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AS8S512K32 - 512K x 32 SRAM

General Description

The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits.

These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology.

Key Features

  • Operation with single 5V.
  • Built in decoupling caps for supply low noise.
  • Vastly improved Icc Specs.
  • Organized as 512Kx32 , byte.
  • High speed: 12, 15, 17, 20, 25, selectable 35, 45 & 55ns.
  • TTL Compatible Inputs and.
  • Low power CMOS Outputs Timing 12ns 15ns 17ns 20ns Markings -12 -15 -17 -20 Package Ceramic Quad Flatpack Pin Grid Array.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AS8SS51R2AK3M2 & AS8S512K32A 512K x 32 SRAM OPTIONS SRAM MEMORY ARRAY Operating Temp. Ranges AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-94611 & 5962-95624 (Military Pinout) Full Military (-55oC to +125oC) Military (-55oC to +125oC) Industrial (-40oC to +85oC) • MIL-STD-883 FEATURES • Operation with single 5V • Built in decoupling caps for supply low noise • Vastly improved Icc Specs • Organized as 512Kx32 , byte • High speed: 12, 15, 17, 20, 25, selectable 35, 45 & 55ns • TTL Compatible Inputs and • Low power CMOS Outputs Timing 12ns 15ns 17ns 20ns Markings -12 -15 -17 -20 Package Ceramic Quad Flatpack Pin Grid Array GENERAL DESCRIPTION The AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits.