ASJD1200R085 Description
ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET.
ASJD1200R085 Key Features
- Hermetic TO-258 Packaging
- 200°C Maximum Operating Temperature (260oC Contact Factory)
- Available Screening
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
- Inherent Radiation Tolerance >100K TID
- Positive Temperature Coefficient for Ease of Paralleling
- Extremely Fast Switching with No “Tail” Current at 150°C
- 1200 Volt Drain-Source Blocking Voltage