ASJD1200R085 - Normally-ON Trench Silicon Carbide Power JFET

Micross

Key Features

Die Inside.
Hermetic TO-258 Packaging.
200°C Maximum Operating Temperature (260oC Contact Factory).
Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions.
Inherent Radiation Tolerance >100K TID.
Positive Temperature Coefﬁcient for Ease of Paralleling.
Extremely Fast Switching with No “Tail” Current at 150°C.
1200 Volt Drain-Source Blocking Voltage.
RDS(on)max of 0.085 .

ASJD1200R085 normally-on trench silicon carbide power jfet by Micross - Datasheet Preview

Datasheet Details

Part number	ASJD1200R085
Manufacturer	Micross
File Size	227.35 KB
Description	Normally-ON Trench Silicon Carbide Power JFET
Datasheet	ASJD1200R085 Datasheet

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ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory) • Available Screening: - MIL-PRF-19500 Equivalent - Space Level - MIL-STD-750 Methods & Conditions • Inherent Radiation Tolerance >100K TID • Positive Temperature Coefﬁcient for Ease of Paralleling • Extremely Fast Switching with No “Tail” Current at 150°C • 1200 Volt Drain-Source Blocking Voltage • RDS(on)max of 0.085  • Voltage Controlled 4 • Low Gate Charge • Low Intrinsic Capacitance ProductSummary BVDS 1200 RDS(ON)max 0.