The DPAD10 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD10 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The DPAD10 features a leakage current of -10 pA and is well suited for use in applications such as input protection for operational amplifiers.
DIRECT REPLACEMENT FOR SILICONIX DPAD10 HIGH ON ISOLATION EXCELLENT CAPACITANCE MATCHING ULTRALOW LEAKAGE REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) 20fA ∆CR ≤ 0.5pF ≤ 10 pA BVR ≥ ‐45V Crss ≤ 2.0pF DPAD10 Benefits: Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA DPAD10
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐45 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ ‐‐ |CR1‐CR2| Differential Capacitance (∆CR) ‐‐ ‐‐ IR Maximum Reverse Leakage Current ‐‐ ‐‐ Clic...
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