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DPAD100 Datasheet PDF

Micross DPAD100

The DPAD100 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD100 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The DPAD100 features a leakage current of 100 pA and is well suited for use in applications such as input protection for operational amplifiers.
Part No. DPAD100
Datasheet DPAD100 Download
Manufacturer
Micross
Description Dual PicoAmp Diodes
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DPAD100 datasheet page 1 preview

FEATURES

DIRECT REPLACEMENT FOR SILICONIX DPAD100 HIGH ON ISOLATION EXCELLENT CAPACITANCE MATCHING ULTRALOW LEAKAGE REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) 20fA ∆CR ≤ 0.5pF ≤ 100 pA BVR ≥ ‐45V Crss ≤ 2.0pF DPAD100 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA DPAD100

APPLICATIONS

: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection DPAD100

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐45 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ ‐‐ |CR1‐CR2| Differential Capacitance (∆CR) ‐‐ ‐‐ IR Maximum Reverse Leakage Current ‐‐ ‐‐...