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DPAD50 Datasheet PDF

Micross DPAD50

The DPAD50 is a low leakage Monolithic Dual Pico-Amp Diode The DPAD50 extremely low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The DPAD50 features a leakage current of -50 pA and is well suited for use in applications such as input protection for operational amplifiers.
  • Max Operating Temp : 150°C
  • Min Operating Temp : -55°C
Source: Octopart
Part No. DPAD50
Datasheet DPAD50 Download
Manufacturer
Micross
Description Dual PicoAmp Diodes
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DPAD50 datasheet page 1 preview

FEATURES

DIRECT REPLACEMENT FOR SILICONIX DPAD50 HIGH ON ISOLATION EXCELLENT CAPACITANCE MATCHING ULTRALOW LEAKAGE REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) 20fA ∆CR ≤ 0.5pF ≤ 50 pA BVR ≥ ‐45V Crss ≤ 2.0pF DPAD50 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA DPAD50

APPLICATIONS

: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection DPAD50

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐45 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ ‐‐ |CR1‐CR2| Differential Capacitance (∆CR) ‐‐ ‐‐ IR Maximum Reverse Leakage Current ‐‐ ‐‐ Clic...