The ID100 is a low leakage Monolithic Dual Pico-Amp Diode The ID100 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The ID100 features a leakage current of 0.1 pA and is well suited for use in applications such as input protection for operational amplifiers. ID100 diodes reduce offset voltages fed capacitively from the ID100 switch gate.
DIRECT REPLACEMENT FOR INTERSIL ID100 REVERSE LEAKAGE CURRENT REVERSE BREAKDOWN VOLTAGE REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
(Note 1) @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Forward Current Reverse Current Maximum Voltages Reverse Voltage Diode to Diode Voltage IR = 0.1pA BVR ≥ 30V Crss = 0.75pF ID100 Benefits: Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +200°C ‐55°C to +150°C 300mW 20mA 100µA 30V ±50V ID100
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage 30 ‐‐ VF Forward Voltage 0.8 ‐‐ IR Reverse Leakage Current ‐‐ 0.1 ‐‐ 2.0 |IR1‐IR2| Differential Leakage Current ‐‐ ‐‐ CrSS Total Reverse Capacitance(Note 2) ‐‐ 0.75 Note 1 - Absolute maximum ratings are limiting values above which ID100 serviceability may be impaired.
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