ID101 Datasheet | Micross

ID101 LOW LEAKAGE PICO-AMP DUAL DIODE Linear Systems replaces discontinued Intersil ID101 The ID101 is a low leakage Monolithic Dual Pico-Amp Diode The ID101 low-leakage monolithic dual diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. In addition the monolithic dual construction allows excellent capacitance matching per diode. The ID101 Features a leakage current of 0.1 p A and is well suited for use in applications such as input protection for operational amplifiers. Features   DIRECT REPLACEMENT FOR INTERSIL ID101  REVERSE LEAKAGE CURRENT  REVERSE BREAKDOWN VOLTAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS (Note 1)  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   Maximum Currents Forward Current   Reverse Current  Maximum Voltages  Reverse Voltage  Diode to Diode Voltage  IR = 0.1p A  BVR ≥ 30V  Crss = 0.75p F  .. ID101 Benefits: - - - - - Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation Op Amp Input Protection Multiplexer Overvoltage Protection ‐65°C to +200°C  ‐55°C to +150°C  300m W  20m A  100µA  30V  ±50V  ID101 Applications:   ID101 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  30  ‐‐  VF  Forward Voltage  0.8  ‐‐  IR  Reverse Leakage Current  ‐‐  0.1  ‐‐  2.0  |IR1‐IR2|  Differential Leakage Current  ‐‐  ‐‐  Cr SS  Total Reverse Capacitance(Note 2)  ‐‐  0.75  Note 1 -...