IT122 Datasheet | Micross

IT122 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT122 The IT122 is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The IT122 is a direct replacement for discontinued Intersil IT122. The 8 Pin P-DIP provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). IT122 Features : - - - Features   Direct Replacement for INTERSIL IT122  HIGH  h FE @ LOW CURRENT  OUTPUT CAPACITANCE  VBE tracking ABSOLUTE MAXIMUM RATINGS 1  @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation (One side)  Continuous Power Dissipation (Both sides)  Linear Derating factor (One side)  Linear Derating factor (Both sides)  Maximum Currents  Collector Current    MIN  ‐‐  ‐‐  ‐‐  TYP  ‐‐  ‐‐  ‐‐  MAX  5  20  25  UNITS  m V  µV/°C  n A  ≥ 80 @ 10µA  ≤ 2.0p F  ≤ 20µV°C  ‐65°C to +200°C  ‐55°C to +150°C  250m W  500m W  2.3m W/°C  4.3m W/°C  10m A    CONDITIONS  IC = 10µA, VCE = 5V  IC = 10µA, VCE = 5V  TA = ‐55°C to +125°C  IC = 10µA, VCE = 5V  .. - High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)  SYMBOL  CHARACTERISTIC  |VBE1 -  VBE2 |  Base Emitter Voltage Differential  ∆|(VBE1 -  VBE2)| / ∆T  Base Emitter Voltage Differential    Change with Temperature  |IB1 -  IB2 |  Base Current Differential    ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  BVCBO  Collector to Base Voltage  45  BVCEO  Collector to Emitter Voltage  45  BVEBO  Emitter‐Base Breakdown Voltage  6.2  BVCCO  Collector to Collector Voltage  60  h FE  DC Current Gain  80  100  VCE(SAT)  Collector Saturation Voltage  ‐‐  IEBO  Emitter Cutoff Current ...