FEATURES
: FEATURES
Direct Replacement for INTERSIL IT122 HIGH hFE @ LOW CURRENT OUTPUT CAPACITANCE VBE tracking ABSOLUTE MAXIMUM RATINGS
1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MIN ‐‐ ‐‐ ‐‐ TYP ‐‐ ‐‐ ‐‐ MAX 5 20 25 UNITS mV µV/°C nA ≥ 80 @ 10µA ≤ 2.0pF ≤ 20µV°C ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential ELECTRICAL CHARACTERISTICS
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN.
Micross