J175 Datasheet PDF

FEATURES

DIRECT REPLACEMENT FOR SILICONIX J175 LOW ON RESISTANCE LOW GATE OPERATING CURRENT FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain Voltage Gate to Source Voltage rDS(on) ≤ 125Ω ID(off) = 10pA t(ON) 25ns J175 Benefits: ‐55°C to +150°C ‐55°C to +135°C 350mW IG = ‐50mA VGDS = 30V VGSS = 30V J175

APPLICATIONS

: ƒ ƒ ƒ ƒ ƒ Analog Switches Choppers Sample-and-Hold Normally “On” Switches Current Limiters J175

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. BVGSS Gate to Source Breakdown Voltage 30 ‐‐ VGS(F) Gate to Source Forward Voltage ‐‐ ‐0.7 VGS(off) Gate to Source Cutoff Voltage 3 ‐‐ IDSS Drain to Source Saturation Current ‐7 ‐‐ IGSS Gate Reverse Current ‐‐ 0.01 IG Gate Operating Current ‐‐ 0.01 ID(off) Drain Cutoff Current...