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J202 Datasheet PDF

Micross J202

The J202 is a high gain N-Channel JFET This n-channel JFET is optimised for high gain. The part is particularly suitable for use in low power or high impedance amplifiers. The TO-92 package is well suited for cost sensitive applications and mass production.
Part No. J202
Datasheet J202 Download
Manufacturer
Micross
Description N-Channel JFET
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J202 datasheet page 1 preview

FEATURES

DIRECT REPLACEMENT FOR SILICONIX J202 LOW CUT OFF VOLTAGE VGS(off) ≤ 1.5 HIGH GAIN AV = 80 V/V

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain Voltage Gate to Source Voltage ‐65°C to +150°C ‐55°C to +135°C 350mW 50mA VGDS = ‐40V VGSS = ‐40V J202 Benefits: ƒ ƒ ƒ ƒ ƒ ƒ High Input Impedance Low Cutoff Voltage Low Noise Battery powered amplifiers Audio Pre-Amplifiers Infra-Red Detector Amplifiers J202

APPLICATIONS

: J202

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage ‐40 VGS(off) Gate to Source Cutoff Voltage ‐0.8 IDSS Drain to Source Saturation Current (Note 2) 0.9 IGSS Gate Reverse Current ‐2 IG Gate Operating Current ‐‐ ID(off) Drain Cutoff Current ‐‐ gfs Forward Transconductance 1 Ciss Input C...