FEATURES
DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐55°C to +150°C High gain Operating Junction Temperature ‐55°C to +135°C Low Leakage Maximum Power Dissipation Low Noise Continuous Power Dissipation 360mW J212 APPLICATIONS
: Derating over temperature 3.27 mW/°C General Purpose Amplifiers MAXIMUM CURRENT UHV / VHF Amplifiers Gate Current (Note 1) 10mA Mixers MAXIMUM VOLTAGES Oscillators Gate to Drain Voltage or Gate to Source Voltage ‐25V J212 ELECTRICAL CHARACTERISTICS
@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V VDS = 0V, IG = ‐1µA VGS(off) Gate to Source Cutoff Voltage ‐4 ‐‐ ‐6 VDS = 15V, ID = 1nA IDSS Drain to Source Saturation Current (Note 2) 15 ‐‐ 40 mA VDS = 15V, VGS = 0V IGSS Gate Rev...
Micross