Part JPAD100
Description PicoAmp Diode
Category Diode
Manufacturer Micross
Size 276.26 KB
Micross
JPAD100

Overview

  • Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 350mW 10mA JPAD100 Applications: *
  • Op Amp Input Protection Multiplexer Overvoltage Protection JPAD100 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐35 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ 1.5 IR Maximum Reverse Leakage Current ‐‐ ‐‐ Click To Buy MAX. ‐‐ 1.5 2 ‐100 UNITS V V pF pA TO-92 (Bottom View) C A 1 2