JPAD200 Datasheet | Micross

JPAD200 LOW LEAKAGE PICO-AMP DIODE Linear Systems replaces discontinued Siliconix JPAD200 The JPAD200 is a low leakage Pico-Amp Diode packaged in TO-92 The JPAD200 extremely low-leakage diode provides a superior alternative to conventional diode technology when reverse current (leakage) must be minimized. The JPAD200 Features a leakage current of -200 p A and is well suited for use in applications such as input protection for operational amplifiers. Features   DIRECT REPLACEMENT FOR SILICONIX JPAD200  REVERSE BREAKDOWN VOLTAGE  ULTRALOW LEAKAGE  REVERSE CAPACITANCE  ABSOLUTE MAXIMUM RATINGS   @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   MAXIMUM CURRENT Forward Current (Note 1)    BVR ≥ ‐35V  ≤ 200 p A  Crss ≤ 2.0p F  .. JPAD200 Benefits: - - - Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C  ‐55°C to +135°C  350m W  10m A  JPAD200 Applications: - - Op Amp Input Protection Multiplexer Overvoltage Protection   JPAD200 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTICS  MIN.  TYP.  BVR  Reverse Breakdown Voltage  ‐35  ‐‐  VF  Forward Voltage  ‐‐  0.8  Cr SS  Total Reverse Capacitance  ‐‐  1.5  IR  Maximum Reverse Leakage Current  ‐‐  ‐‐  Click To Buy MAX.  ‐‐  1.5  2  ‐200  UNITS  V  V  p F  p A  TO-92 (Bottom View) C A 1 2 CONDITIONS  IR = ‐1µA  IF = 5m A  VR = ‐5V, f = 1MHz  VR = ‐ 20V  Notes: 1....