JPAD50 Datasheet PDF

FEATURES

DIRECT REPLACEMENT FOR SILICONIX JPAD50 REVERSE BREAKDOWN VOLTAGE ULTRALOW LEAKAGE REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS

@ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Forward Current (Note 1) BVR ≥ ‐35V ≤ 50 pA Crss ≤ 2.0pF JPAD50 Benefits: ƒ ƒ ƒ Negligible Circuit Leakage Contribution Circuit “Transparent” Except to Shunt High-Frequency Spikes Simplicity of Operation ‐65°C to +150°C ‐55°C to +135°C 350mW 10mA JPAD50

APPLICATIONS

: ƒ ƒ Op Amp Input Protection Multiplexer Overvoltage Protection JPAD50

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. BVR Reverse Breakdown Voltage ‐35 ‐‐ VF Forward Voltage ‐‐ 0.8 CrSS Total Reverse Capacitance ‐‐ 1.5 IR Maximum Reverse Leakage Current ‐‐ ‐‐ Click To Buy MAX. ‐‐ 1.5 2 ‐50 UNITS V V pF pA TO-92 (Bottom View) C A 1 2 CONDITIONS IR = ‐1µA IF = 5mA VR = ‐5V, f = 1MHz VR = ‐ 20V Notes: 1.