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LS120A Datasheet PDF

Micross LS120A

The LS120A is a monolithic pair of NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS120A is a direct replacement for discontinued Intersil IT120A.
Part No. LS120A
Datasheet LS120A Download
Manufacturer
Micross
Description General Purpose
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LS120A datasheet page 1 preview

FEATURES

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FEATURES

Direct Replacement for INTERSIL IT120A HIGH hFE @ LOW CURRENT OUTPUT CAPACITANCE VBE tracking

ABSOLUTE MAXIMUM RATINGS

1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MIN ‐‐ ‐‐ ‐‐ TYP ‐‐ ‐‐ ‐‐ MAX 1 3 2.5 UNITS mV µV/°C nA ≥ 200 @ 10µA ≤ 2.0pF ≤ 3.0µV°C ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA CONDITIONS IC = 10µA, VCE = 5V IC = 10µA, VCE = 5V TA = ‐55°C to +125°C IC = 10µA, VCE = 5V ƒ High hfe at low current Tight matching Tight VBE tracking Low Output Capacitance MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN.